دیتاشیت STP5NK60Z
مشخصات دیتاشیت
| نام دیتاشیت | ST(D,P)5NK60Z(FP) |
|---|---|
| حجم فایل | 592.235 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 24 |
دانلود دیتاشیت ST(D,P)5NK60Z(FP) |
ST(D,P)5NK60Z(FP) Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP5NK60Z
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 90W
- Total Gate Charge (Qg@Vgs): 26nC@0~10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 690pF@25V
- Continuous Drain Current (Id): 5A
- Gate Threshold Voltage (Vgs(th)@Id): 3.75V@50uA
- Reverse Transfer Capacitance (Crss@Vds): 20pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,2.5A
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: STP5N
- detail: N-Channel 600V 5A (Tc) 90W (Tc) Through Hole TO-220AB
